PART |
Description |
Maker |
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke 0.5-2.5 GHz Ultralinear Mixer w/LO Buffer 8.5 - 11 GHz 6-bit Phase Shifter Low Noise Amp, SB Gain Block X-band Discrete Power pHEMT Ku-band Discrete Power pHEMT 18mm HFET 24mm HFET Cell-Band CDMA PA Module; 1-Bit Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
FPD3000 FPD30001 |
2W POWER PHEMT
|
Filtronic Compound Semiconductors
|
HMC94911 |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz
|
Hittite Microwave Corporation
|
LP3000P100 |
PACKAGED 2W POWER PHEMT
|
Filtronic Compound Semi...
|
LP6836 |
MEDIUM POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
FPD1050 FPD10501 |
0.75W POWER PHEMT
|
Filtronic Compound Semicond... Filtronic Compound Semiconductors
|
FPD3000P100 |
2W PACKAGED POWER PHEMT
|
Filtronic Compound Semicond... FILTRONIC[Filtronic Compound Semiconductors]
|
FPD10000V |
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
|
FILTRONIC[Filtronic Compound Semiconductors]
|